Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
نویسنده
چکیده
Wedemonstratemonolayer(1L)MoS2 grown by chemical vapor deposition (CVD)with transport properties comparable to those of the best exfoliated 1L devices over awide range of carrier densities (up to∼10 cm) and temperatures (80–500 K). Transfer lengthmeasurements decouple the intrinsicmaterialmobility from the contact resistance, at practical carrier densities (>10 cm).We demonstrate the highest current density reported to date (∼270 μA μm or 44MA cm) at 300 K for an 80 nm long device fromCVD-grown 1LMoS2. Using simulations, we discuss what improvements of 1LMoS2 are still required tomeet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.
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